Charged EVs | STMicroelectronics unveils new SiC MOSFETs for EV traction inverters

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Charged EVs | STMicroelectronics unveils new SiC MOSFETs for EV traction inverters


Switzerland-based semiconductor know-how agency STMicroelectronics is introducing its fourth-generation STPOWER silicon carbide (SiC) MOSFET product vary.

The corporate’s Era 4 know-how is designed to supply extra energy effectivity, energy density and robustness than earlier generations and is optimized for traction inverters in EV powertrains.

ST has accomplished qualification of the platform’s 750 V class and expects to qualify the 1200 V class within the first quarter of 2025. Business availability of gadgets with nominal voltage rankings of 750 V and 1200 V will observe as the corporate ramps up volumes by means of 2025, for purposes working from customary AC-line voltages as much as high-voltage EV batteries and chargers.

The Era 4 SiC MOSFETs characteristic a decrease on-resistance (RDS(on)) than prior generations, minimizing conduction losses, and enhancing general system effectivity. They provide quicker switching speeds, which translate to decrease switching losses—key for high-frequency purposes and enabling extra compact and environment friendly energy converters.

The typical die measurement of Era 4 gadgets is 12-15% smaller than that of Era 3, contemplating an RDS(on) at 25 °C, permitting for extra compact energy converter designs to save lots of house and scale back system prices. The gadgets are designed to assist deliver SiC past premium EVs to mid-size and compact fashions.

The Era 4 know-how is strong in Dynamic Reverse Bias (DRB) circumstances, exceeding the AQG324 automotive customary to make sure dependable operation in harsh circumstances.

ST plans to introduce further SiC merchandise by means of 2027. The fifth era of ST SiC energy gadgets will characteristic high-power density know-how based mostly on planar construction. The corporate can also be creating gadgets with improved on-resistance RDS(on) values at excessive temperatures and additional RDS(on) discount in comparison with present SiC applied sciences.

“We proceed to advance SiC MOSFET know-how with improvements within the machine, superior packages, and energy modules,” mentioned Marco Cassis, President, Analog, Energy & Discrete, MEMS and Sensors Group.

Supply: STMicroelectronics