Dutch semiconductor designer and producer NXP Semiconductors is collaborating with German automotive and industrial programs provider ZF Friedrichshafen to supply silicon carbide (SiC) traction inverters for EVs.
The collaboration integrates NXP’s GD316x high-voltage remoted gate drivers into ZF’s 800 V SiC-based traction inverter options for EVs. This purpose is to increase driving vary and cut back the variety of charging stops drivers must make whereas reducing system stage prices for OEMs.
As traction inverters migrate to SiC-based designs, the SiC energy units must be paired with high-voltage remoted gate drivers to allow increased switching frequency, decrease conduction losses, higher thermal traits and better robustness at excessive voltages than the earlier technology of silicon-based IGBT and MOSFET energy switches.
The GD316x vary incorporates a number of programmable management, diagnostic, monitoring and safety options. Its excessive stage of integration permits a smaller footprint and simplifies system design. The gate drivers are designed to scale back electromagnetic compatibility (EMC) noise whereas additionally decreasing switching vitality losses for elevated effectivity. Quick short-circuit safety occasions of <1 µsec together with highly effective and programmable gate drive schemes optimize the efficiency of the SiC energy modules, in line with NXP.
“The mixture of ZF’s experience in motor management and energy electronics with NXP’s GD316x gate driver household permits us to supply our newest SiC-based traction inverters with increased energy and quantity density, effectivity and differentiation, and supply our prospects with vital security, effectivity, vary and efficiency enhancements,” mentioned Dr. Carsten Götte, SVP Electrified Powertrain Know-how at ZF.
Supply: NXP Semiconductors