The world’s largest chemical producer, Germany’s BASF, has developed a polyphthalamide (PPA) for manufacturing housings of insulated-gate bipolar transistor (IGBT) semiconductors for next-generation energy electronics.
The Ultramid Superior N3U41 G6 is designed to fulfill the rising demand for high-performance, dependable digital elements for EVs, in addition to high-speed trains, sensible manufacturing and renewable electrical energy era.
These functions require supplies that may stand up to greater temperatures, present sustained electrical insulation, and keep dimensional stability below difficult environmental circumstances like humidity, mud and grime.
The laser-sensitive Ultramid Superior N3U41G6 with non-halogenated flame retardant combines excessive thermal stability with low water uptake and high-performance electrical properties. It’s characterised by a excessive Comparative Monitoring Index (CTI) of 600, supporting the miniaturization of IGBTs by decrease creepage and enhanced insulation in comparison with supplies up to now used for energy switches, in accordance with the corporate. The UL-certified grade reveals {an electrical} Relative Temperature Index (RTI) worth of 150° C.
For IGBT manufacturing, the PPA is appropriate with potting supplies used to assemble the semiconductors with steel pins and clamps after injection molding.
“BASF’s PPA compound is globally out there and prepared for sampling,” mentioned Jochen Seubert, senior software knowledgeable for energy electronics at BASF. “Backed by our customer-focused technical help partly growth, we anticipate this materials to contribute to the development of energy electronics.”
Supply: BASF
