Netherlands-based Nexperia’s 650 V, 10 A silicon carbide (SiC) Schottky diode is now automotive-qualified (PSC1065H-Q) and out there in real-two-pin (R2P) DPAK (TO-252-2) packaging, making it appropriate for numerous functions in EVs and different vehicles.
The diode is designed to deal with the challenges of demanding excessive voltage and excessive present functions together with switched-mode energy provides, AC-DC and DC-DC converters, battery charging infrastructure, motor drives and uninterruptible energy provides in addition to photovoltaic inverters.
The diode’s merged PiN Schottky (MPS) construction makes it strong in opposition to surge currents, eradicating the necessity for extra safety circuitry. This reduces system complexity and allows {hardware} designers to realize larger effectivity with smaller kind elements in rugged high-power functions.
Nexperia’s “skinny SiC” expertise delivers a substrate that’s one-third of its authentic thickness, which reduces the thermal resistance from the junction to the back-side metallic. This ends in decrease working temperature, larger reliability and gadget lifetime, larger surge present functionality, and decrease ahead voltage drop, in line with the corporate.
“The superior reverse restoration of those diodes interprets to excessive effectivity in real-world use,” mentioned Katrin Feurle, Senior Director and Head of Product Group SiC Diodes & FETs at Nexperia. “We’re notably excited that that is our first automotive-qualified product, and it’s already acknowledged by main automotive gamers for its efficiency and reliability.”
Supply: Nexperia